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PD - 94432A
IRHG57110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
Product Summary
Part Number Radiation Level IRHG57110 100K Rads (Si) IRHG53110 IRHG54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.29 0.29 0.29 0.31 ID 1.6A 1.6A 1.6A 1.6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
TM (R)
4# TECHNOLOGY
IRHG58110 1000K Rads (Si)
MO-036AB
International Rectifier's RAD-HardTM HEXFET(R) MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.6 1.0 6.4 1.4 0.011 20 130 1.6 0.14 6.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical)
g
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08/01/02
IRHG57110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 1.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.14 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.29 4.0 -- 10 25 100 -100 17 4.4 3.9 21 16 30 15 -- V V/C V S( ) A
Test Conditions
V GS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 1.0A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 1.0A VDS= 80V, VGS= 0V VDS = 80V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.6A, VDS = 50V VDD = 50V, ID = 1.6A, VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
370 110 3.4
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.6 6.4 1.2 110 380
Test Conditions
A
V nS nC Tj = 25C, IS = 1.6A, VGS = 0V Tj = 25C, IF = 1.6A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 90
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Pre-Irradiation
IRHG57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation (Per Die)
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (MO-036AB) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.226 0.29 1.2 100 2.0 -- -- -- -- -- -- -- 4.5 100 -100 25 0.246 0.31 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS =0V VGS = 12V, ID = 1.0A VGS = 12V, ID = 1.0A VGS = 0V, I S = 1.6A
1. Part number IRHG57110, IRHG53110, IRHG54110 2. Part number IRHG58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion Br I LET MeV/(mg/cm2)) 36.7 59.8 Energy (MeV) 309 341 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V @VGS=-20V 80 39.5 100 100 100 100 100 32.5 100 100 100 90 25 20
120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20
VDS
Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHG57110
Pre-Irradiation
10
I D , Drain-to-Source Current (A)
I , Drain-to-Source Current (A) I DD ,Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10 10
VGS VGS 15V 15V 12V 12V 10V 10V 9.0V 9.0V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V BOTTOM 5.0V BOTTOM 5.0V TOP TOP
5.0V 5.0V
1
5.0V
1 1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
0.1 0.1 0.1 0.1
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
1 1
20s PULSE WIDTH 20s PULSE WIDTH T = 150 C T = 150 C
J J 10 10
100 100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 150 C
ID = 1.6A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1
1.5
1.0
0.5
0.1 5.0
V DS = 50V 20s PULSE WIDTH 6.0 5.5 6.5
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHG57110
800
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
600
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 1.6A
16
VDS = 80V VDS = 50V VDS = 20V
400
Ciss C oss
12
8
200
4
C rss
0 1 10 100
0 0 4
FOR TEST CIRCUIT SEE FIGURE 13
12 8 16
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
TJ = 150 C
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
1
ID , Drain-to-Source Current (A)
TJ = 25 C
1
1ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
Tc = 25C Tj = 150C Single Pulse 0.1 1 10
10ms
VSD ,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHG57110
Pre-Irradiation
1.6
VDS VGS
RD
1.3
D.U.T.
+
RG
I D , Drain Current (A)
-V DD
1.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.6
Fig 10a. Switching Time Test Circuit
0.3
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA)
0.20 10 0.10 0.05 0.02 0.01 1
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.0001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 10 100 0.1 1 1000
PDM t1 t2
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Pre-Irradiation
IRHG57110
300
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
250
TOP BOTTOM ID 0.7A 1.0A 1.6A
VDS
L
D R IV E R
200
RG
2 VV 0 GS tp
D .U .T.
IA S
+ V - DD
150
A
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
50
0 25 50 75 100 125 150
V (B R )D SS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHG57110
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 100mH, Peak IL = 1.6A, VGS =12V I SD 1.6A, di/dt 340A/s, VDD 100V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions -- MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/02
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